100 V N-channel power MOSFET products for industrial equipment, featuring industry’s lowest level On-resistance: TPH3R70APL, TPN1200APL
时间:2017-12-22 09:19来源:东芝半导体&存储产品
摘要:“TPH3R70APL”and“TPN1200APL”arenewlowvoltageN-channelpowerMOSFETproducts
“TPH3R70APL” and “TPN1200APL” are new low voltage N-channel power MOSFET products (U-MOSIX-H series); these 100 V products suitable for power supplies for industrial equipment.
Fabricated with the company’s latest low voltage U-MOSIX-H trench process, which optimizes the device structure, the TPH3R70APL and TPN1200APL deliver the industry’s lowest level On-resistance[1]. In addition, compared with the current devices using the U-MOSVIII-H process, the new devices have lower On-resistance × output charge and On-resistance × gate switch charge key figures of merit for MOSFETs for switching applications[2].
Toshiba Electronic Devices & Storage Corporation will continue to expand its MOSFET portfolio with market trends in order to help improve the power supply efficiency.
Notes:
[1] As of November, 2017 for MOSFETs with equivalent ratings. Toshiba Electronic Devices & Storage Corporation survey.
[2] For TPH3R70APL, its On-resistance × output charge has been reduced by 10 %, and On-resistance × gate switch charge has been reduced by 10 %, compared with TPH4R10ANL (U-MOSVIII-H).
RDS(ON)=3.7 mΩ (max) @VGS=10 V (TPH3R70APL)
RDS(ON)=11.5 mΩ (max) @VGS=10 V (TPN1200APL)
· Low output charge and low gate switch charge
· Allows 4.5V logic level drive
· Motor control equipment
The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.
Fabricated with the company’s latest low voltage U-MOSIX-H trench process, which optimizes the device structure, the TPH3R70APL and TPN1200APL deliver the industry’s lowest level On-resistance[1]. In addition, compared with the current devices using the U-MOSVIII-H process, the new devices have lower On-resistance × output charge and On-resistance × gate switch charge key figures of merit for MOSFETs for switching applications[2].
Toshiba Electronic Devices & Storage Corporation will continue to expand its MOSFET portfolio with market trends in order to help improve the power supply efficiency.
Notes:
[1] As of November, 2017 for MOSFETs with equivalent ratings. Toshiba Electronic Devices & Storage Corporation survey.
[2] For TPH3R70APL, its On-resistance × output charge has been reduced by 10 %, and On-resistance × gate switch charge has been reduced by 10 %, compared with TPH4R10ANL (U-MOSVIII-H).
Features
· Industry’s lowest level On-resistance[1]RDS(ON)=3.7 mΩ (max) @VGS=10 V (TPH3R70APL)
RDS(ON)=11.5 mΩ (max) @VGS=10 V (TPN1200APL)
· Low output charge and low gate switch charge
· Allows 4.5V logic level drive
Applications
· Power supplies for industrial equipment· Motor control equipment
Product Specifications
(Unless otherwise specified, @Ta=25°C)Internal Circuit
Application Circuit Example
The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.
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