The second generation 650 V SiC SBD products in DPAK packages: TRS2P65F, etc.

时间:2017-12-07 09:42来源:东芝半导体&存储产品


All the six products including “TRS2P65F” are the second generation silicon carbide Schottky barrier diodes (SiC SBD). They use the surface mount type DPAK package.

The new second generation products are less likely to break down with their increased forward surge current (IFSM) which is about 1.7 times higher than the first generation product, and feature lower loss with their decreased figure of merit (VF·QC[1]), about 2/3 of the first generation products. They will contribute to making power supplies smaller and more efficient.

Notes: [1] VF·QC (the product of forward voltage and total capacitive charge) is an index representing the loss performance of a SiC SBD. The lower this index value, the lower the loss.


· High forward surge current (About 1.7 times higher than the first generation)
· Low VF·QC[1] (About 2/3 of the first generation)
· Using surface mount type DPAK package


· High efficiency power supply for consumer products and OA equipment
(Large screen 4K LCD TV, OLED TV, Projector, Multi-function printer etc.)
· High efficiency power supply for industrial equipment (Base station, PC server etc.)
· Photovoltaic inverters

Product Specifications

Internal Circuit


Application Circuit Example


SiC SBDs are often used in PFC parts in Continuous Current Mode (CCM). When an AC power is applied (for example, when the power is turned on) with Q1 in OFF state, a large current may flow in a diode of the PFC part. IFSM is surge capability in commercial frequencies, and it is important item not to damage the product.

The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.

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