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100 V dual-type N-channel MOSFET product with highly allowable power dissipation in a small package: SSM6N815R

时间：2017-12-01 10:18来源：东芝半导体&存储产品

摘要："SSM6N815R"is100Vdual-typeN-channelMOSFETproductfeaturinglowOn-resistanceWithitslowOn-resistancecharacteristics,powerdissipationinthecircuitscanbereduced

"SSM6N815R" is 100 V dual-type N-channel MOSFET product featuring low On-resistance.


With its low On-resistance characteristics, power dissipation in the circuits can be reduced. And as a dual-type has been implemented in a TSOP6F package, the product can reduce its mounting area by about 40 % compared with a case where two single-type SOT-23F packages are used. It is suitable for applications such as LED lightings and LED drive circuits for LCD TVs that require both a high voltage and a small mounting area.

Features

· Low On-resistance
· Small package [2.9×2.8 mm (typ.)]
· Highly allowable power dissipation rating

Applications

· LED lightings
· LCD TVs
· Industrial equipment

Product Specifications

(@Ta=25°C)
 
 

Pin Assignment

 
 

Application Circuit Example

 
 
The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.

Comparison of Mounting Area

 
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