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The second generation 650V SiC SBD products in DPAK packages TRS2P65F , etc

时间：2017-12-01 10:07来源：东芝半导体&存储产品

摘要：“TRS2E65F”and“TRS3E65F”arethesecondgeneration650VSiliconCarbideSchottkyBarrierDiodes(SiCSBD)

“TRS2E65F” and “TRS3E65F” are the second generation 650 V Silicon Carbide Schottky Barrier Diodes (SiC SBD). The new products, of which forward direct current rating is 2 A or 3 A, join the lineup of products using the TO-220-2L package.


The second generation products are less likely to break down with their increased peak forward surge current (IFSM) of absolute maximum ratings which is about 1.7 times higher than the first generation product, and feature lower loss with their decreased figure of merit (VF·QC[1]), about 2/3 of the first generation products. They will contribute to making power supplies smaller and more efficient.

Notes: [1] VF·QC (a product of forward voltage and total capacitive charge) is an index representing the loss performance of a SiC SBD, and the lower the value, the lower the loss of the SiC SBD when compared among products with the same current rating.

Features

· Forward DC current rating: IF(DC)=2 A/3 A (Applicable to small capacity power supplies)
· High peak forward surge current
(Second generation products: About 1.7 times higher than the first generation products)
· Low VF·QC[1], figure of merit
(Second generation products: About 2/3 of the first generation products)

Applications

· High efficiency power supply for consumer products and OA equipment
(4K LCD TV, OLED TV, Projector, Multi-function printer etc.)
· High efficiency power supply for industrial equipment (Base station, PC server etc.)
· Photovoltaic inverters

Product Specifications

(@Ta=25°C)


Internal Circuit

 
 

Application Circuit Example

 
 
SiC SBDs are often used in PFC parts in Continuous Current Mode (CCM). When an AC power is applied (for example, when the power is turned on) with Q1 in OFF state, a large current may flow in a diode of the PFC part. IFSM is surge capability in commercial frequencies, and it is important item not to damage the product.

The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.
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上一篇：Expanded lineup of the second generation of SiC SBD products with a TO-220-2L package: TRS2E65F, TRS3E65F
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